Samsung has already introduced the Galaxy S10+ and Galaxy Fold smartphones with 12GB of RAM last month. Today the company has announced that it has started mass production of 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) RAM for premium smartphones. It is achieved by combining six 16-gigabit (Gb) LPDDR4X chips (16Gb=2GB) based on the second-generation 10nm-class (1y-nm) process into a single package, and promises up to a 10% power reduction while maintaining the same data rate of 4,266 megabits per second (Mb/s) as it 8GB RAM.
This four-channel package can realize a data rate of 34.1GB per second and its thickness has been reduced more than 20% from the 1st-gen package, enabling OEMs to design slimmer yet more effective mobile devices.
Samsung said that it plans to more than triple the supply of its 1y-nm-based 8GB and 12GB mobile DRAM during the second half of 2019 to meet the anticipated high demand, thanks to its cutting-edge memory line in Pyeongtaek, Korea. Check out Samsung’s history of DRAM development from 2009 to 2019.
|Feb. 2019||12GB||1y-nm 16Gb LPDDR4X, 4266Mb/s|
|July 2018||8GB||1y-nm 16Gb LPDDR4X, 4266Mb/s|
|April 2018||8GB (development)||1x-nm 8Gb LPDDR5, 6400Mb/s|
|Sept. 2016||8GB||1x-nm 16Gb LPDDR4X, 4266Mb/s|
|Aug. 2015||6GB||20nm (2z) 12Gb LPDDR4, 4266Mb/s|
|Dec. 2014||4GB||20nm (2z) 8Gb LPDDR4, 3200Mb/s|
|Sept. 2014||3GB||20nm (2z) 6Gb LPDDR3, 2133Mb/s|
|Nov. 2013||3GB||2y-nm 6Gb LPDDR3, 2133Mb/s|
|July 2013||3GB||2y-nm 4Gb LPDDR3, 2133Mb/s|
|April 2013||2GB||2y-nm 4Gb LPDDR3, 2133Mb/s|
|Aug. 2012||2GB||30nm-class 4Gb LPDDR3, 1600Mb/s|
|2011||1/2GB||30nm-class 4Gb LPDDR2, 1066Mb/s|
|2010||512MB||40nm-class 2Gb MDDR, 400Mb/s|
|2009||256MB||50nm-class 1Gb MDDR, 400Mb/s|