Samsung Electronics started mass producing 8 gigabit (Gb) LPDDR4 mobile DRAM based 20-nanometer (nm) process technology at the end of 2014. The company is using 4GB LPDDR4 RAM with four 8Gb LPDDR4 chips in the latest Galaxy S6 edge+ and the Galaxy Note5 smartphones. Today the company announced that it has started mass producing industry’s first 12-gigabit (Gb) LPDDR4 (low power, double data rate 4) mobile DRAM, based on the same 20-nanometer (nm) process technology
Features of Samsung’s new high-speed 12Gb LPDDR4 mobile DRAM
- Fabricated on 20-nanometer (nm) class process technology
- With two or four of the 12Gb chips, a single 3GB or 6GB LPDDR4 package can provide the highest level of performance
- Data transfer rate of 4,266 megabits per second (Mbps) per pin, 30% faster than 20nm-based 8Gb LPDDR4
- Twice as fast as DDR4 DRAM for PCs, while consuming 20% less energy
- 6GB LPDDR4 package can easily fit into the same space used for 3GB LPDDR4 packages currently available
Samsung said that 6GB LPDDR4 RAM is expected in next-generation flagship mobile devices. Hope we can expect 6GB DDR4 RAM in the Galaxy S7 next year. Samsung expects to DDR4 RAM to expand beyond smartphones and tablets such as ultra-slim PCs, digital appliances and automotive devices, in the coming years.