Samsung today announced that it has begun mass production of the industry’s first 16-gigabyte (GB) LPDDR5 mobile DRAM package for next-generation premium smartphones. This comes after the first 12GB LPDDR5 DRAM mass production in July, 2019.
- Offers data transfer of 5,500 megabits per second (Mb/s), approximately 1.3 times faster than the previous mobile memory (LPDDR4X, 4266Mb/s).
- Consists of eight 12-gigabit (Gb) chips and four 8Gb chips, equipping premium smartphones with twice the DRAM capacity found in many higher-end laptops and gaming PCs today
- Compared to an 8GB LPDDR4X package, the new mobile DRAM delivers more than 20-percent energy savings while providing up to twice the capacity
“As Samsung continues to expand LPDDR5 mobile DRAM production at its Pyeongtaek site, the company plans to mass-produce 16Gb LPDDR5 products based on third-generation 10nm-class (1z) process technology in the second half of this year, in line with the development of a 6,400Mb/s chipset,” said the company.
Even though it’s not mentioned, the latest 16GB LPDDR5 DRAM should be the one used in Samsung Galaxy S20 Ultra that was introduced earlier this month.
Samsung Mobile DRAM Timeline: Production/Mass Production
|Dec 2019||16GB||10nm-class 12Gb+8Gb LPDDR5, 5500Mb/s|
|Sep 2019||12GB (uMCP)||10nm-class 24Gb LPDDR4X, 4266Mb/s|
|Jul 2019||12GB||10nm-class 12Gb LPDDR5, 5500Mb/s|
|Jun 2019||6GB||10nm-class 12Gb LPDDR5, 5500Mb/s|
|Feb 2019||12GB||10nm-class 16Gb LPDDR4X, 4266Mb/s|
|Jul 2018||8GB||10nm-class 16Gb LPDDR4X, 4266Mb/s|
|10nm-class 8Gb LPDDR5, 6400Mb/s|
|Sep 2016||8GB||10nm-class 16Gb LPDDR4X, 4266Mb/s|
|Aug 2015||6GB||20nm 12Gb LPDDR4, 4266Mb/s|
|Dec 2014||4GB||20nm 8Gb LPDDR4, 3200Mb/s|
|Sep 2014||3GB||20nm 6Gb LPDDR3, 2133Mb/s|
|Nov 2013||3GB||20nm-class 6Gb LPDDR3, 2133Mb/s|
|Jul 2013||3GB||20nm-class 4Gb LPDDR3, 2133Mb/s|
|Apr 2013||2GB||20nm-class 6Gb LPDDR3, 2133Mb/s|
|Aug 2012||2GB||30nm-class 4Gb LPDDR3, 1600Mb/s|
|2011||1/2GB||30nm-class 4Gb LPDDR2, 1066Mb/s|
|2010||512MB||40nm-class 2Gb MDDR, 400Mb/s|
|2009||256MB||50nm-class 1Gb MDDR, 400Mb/s|