Samsung starts mass production of first 1TB eUFS flash memory ahead of Galaxy S10 launch

Samsung  has announced that it has begun mass production of first 1TB flash storage for next-generation mobile devices and it utilizes  16 stacked layers of 512-gigabit (Gb) V-NAND chips. It uses the same 11.5mm x 13.0mm package as the previous 512GB version, but this uses a newly developed proprietary controller. This will allow users to store 260 10-minute videos in 4K UHD (3840×2160) format, compared to 13 videos of the same size in 64GB eUFS. Continue reading “Samsung starts mass production of first 1TB eUFS flash memory ahead of Galaxy S10 launch”