Back in October last year there was a report that said that the upcoming Snapdragon 830 SoC will be based on 10nm process technology. Now the same weibo user says that the processor will be based on Samsung’s 10nm FinFET process technology. Samsung recently announced that Qualcomm Snapdragon 820 processor will use its 14nm LPP (Low-Power Plus) process, the 2nd generation of the company’s 14nm FinFET process technology.
Last month’s rumor said that the Snapdragon 830 will come with support for up to 8GB of RAM, the new report says the same. It also says that the upcoming high-end processor will come with improved custom 64-bit Qualcomm Kryo CPU compared to the Snapdragon 820.
We already know that the the Qualcomm Snapdragon 820 SoC will be launched by the first half of this year, which is expected to power a variant of the Samsung Galaxy S7 and several other flagships that are expected to be announced at the MWC 2016 next month. The Qualcomm Snapdragon 830 processor is expected to release sometime in early 2017. It might be announced at the IFA later this year or at the CES 2017."Qualcomm Snapdragon 830 based on Samsung's 10nm process, 8GB RAM support rumored for early 2017",